Datasheet Analog Devices HMC462LP5E — Datenblatt

HMC462LP5 / 462LP5E
v05.0213 AMPLIFIERS -LOW NOISE -SMT GaAs pHEMT MMIC
LOW NOISE AMPLIFIER, 2 -20 GHz
Typical Applications Features The HMC462LP5 / HMC462LP5E Wideband LNA is
ideal for: Noise Figure: 2.5 dB @ 10 GHz • Telecom Infrastructure P1dB Output Power: +14.5 dBm @ 10 GHz • Microwave Radio & VSAT Self-Biased: +5V @ 66mA • Military EW, ECM & C3I 50 Ohm Matched Input/Output • Test Instrumentation 25 mm2 Leadless SMT Package Gain: 13 dB • Fiber Optics Functional Diagram General Description
The HMC462LP5 & HMC462LP5E are GaAs MMIC
pHEMT Low Noise Distributed Amplifiers in leadless
5x5 mm surface mount packages which operate
between 2 and 20 GHz. The self-biased amplifier
provides 13 dB of gain, 2.5 to 3.5 dB noise figure and
+14.5 dBm of output power at 1 dB gain compression
while requiring only 66 mA from a single +5V supply.
Gain flatness is excellent from 6 -18 GHz making
the HMC462LP5 & HMC462LP5E ideal for EW,
ECM RADAR and test equipment applications. The
wideband amplifier I/Os are internally matched to 50
Ohms and are internally DC blocked. Electrical Specifications, TA = +25° C, Vdd= 5V
Parameter Min. Frequency Range
Gain Max. Min. 2-6
12 ±0.5 Gain Variation Over Temperature Typ. Max. Min. 6 -14 14 Gain Flatness 11 13 10 ±0.5 Typ. Max. Units 14 -20 GHz 12 dB ±0.5 dB 0.015 0.025 0.02 0.03 0.03 0.04 dB/ °C Noise Figure 3.0 4.0 2.5 4.0 4.0 6.0 dB Input Return Loss 15 13 11 dB Output Return Loss 12 12 8 dB 12 dBm Output Power for 1 dB Compression (P1dB) 12 15 11 14 9 Saturated Output Power (Psat) 17 16 15 dBm Output Third Order Intercept (IP3) 26 25 22 dBm Supply Current
(Idd) (Vdd= 5V) 1 Typ. 41 66 84 41 66 84 41 66 84 mA Information furnished by Analog Devices is believed to be accurate and reliable. However, no
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