Datasheet Analog Devices HMC-ALH311-SX — Datenblatt

HMC-ALH311
v02.0209 LOW NOISE AMPLIFIERS -CHIP 1 GaAs HEMT MMIC LOW NOISE
DRIVER AMPLIFIER, 22.0 -26.5 GHz Typical Applications Features This HMC-ALH311 is ideal for: P1dB Output Power: +12 dBm • Point-to-Point Radios Gain: 25 dB • Point-to-Multi-Point Radios Noise Figure: 3 dB @ 25 GHz • Military & Space Supply Voltage: +2.5V @ 52 mA • Test Instrumentation Die Size: 1.80 x 0.73 x 0.1 mm Functional Diagram General Description
The HMC-ALH311 is a GaAs MMIC HEMT Low Noise
Driver Amplifier die which operates between 22 and
26.5 GHz. The amplifier provides 25 dB of gain, a
typical noise figure of 3 dB at 25 GHz, and +12 dBm of
output power at 1 dB gain compression while requiring
only 52 mA from a +2.5V supply voltage. The HMCALH311 is ideal for microwave radio driver amplifier
applications between 22 to 26.5 GHz. Due to its small
size, the HMC-ALH311 die is ideal for integration into
Multi-Chip-Modules (MCMs). Electrical Specifi cations*, TA = +25° C, Vdd = 2.5V
Parameter Min. Frequency Range
Gain Typ. Max. 22 -24
22 Min. Typ. Max. 24 -26.5 Units
GHz 25 dB Gain Variation over Temperature 0.03 dB / °C Noise Figure 3.5 Input Return Loss 10 15 Output Return Loss 12 15 dB Output Power for 1 dB Compression 12 12 dBm Supply Current (Vdd = 2.5V, Vgg1 = -0.3V Typ.) 52 52 mA 4.5 3 3.5 dB
dB *Unless otherwise indicated, all measurements are from probed die 1 -144 For price,
delivery,
and to placeCorporation:
orders: Analog Devices, Inc.,
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