Datasheet Analog Devices HMC-ALH444-SX — Datenblatt

HMC-ALH444
v04.0417 AMPLIFIERS -LOW NOISE -CHIP 1 GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 1 -12 GHz Typical Applications Features This HMC-ALH444 is ideal for: Noise Figure: 1.75 dB @ 10 GHz • Wideband Communication Systems Gain: 17 dB • Surveillance Systems P1dB Output Power: +19 dBm @ 5 GHz • Point-to-Point Radios Supply Voltage: +5V @ 55 mA • Point-to-Multi-Point Radios Die Size: 2.64 x 1.64 x 0.1 mm • Military & Space
• Test Instrumentation
* VSAT General Description Functional Diagram The HMC-ALH444 is a GaAs MMIC HEMT Low Noise
Wideband Amplifier die which operates between 1
and 12 GHz. The amplifier provides 17 dB of gain, 1.5
dB noise figure and +19 dBm of output power at 1 dB
gain compression while requiring only 55 mA from a
+5V supply voltage. Electrical Specifications*, TA = +25° C, Vdd= +5V
Parameter Min. Frequency Range
Gain
Gain Variation over Temperature Typ. Max. 1 -12
15 Units
GHz 17 dB 0.02 dB / °C Noise Figure 1.5 2 dB Input Return Loss 10 Output Return Loss 14 dB Output IP3 28 dBm Output Power for 1 dB Compression 19 dBm Supply Current (Idd)
(Vdd = 5V, Vgg1 = -0.5V Typ., Vgg2 = 1.5V Typ) 55 mA dB *Unless otherwise indicated, all measurements are from probed die 1-1 Information
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