FEATURES FUNCTIONAL BLOCK DIAGRAM Low noise figure: 1.1 dB typical
High gain: 19.5 dB typical
High output third order intercept (IP3): 33 dBm typical
Die size: 0.945 mm × 0.61 × 0.102 mm APPLICATIONS 2
RFIN/VGG1 1 HMC8410CHIPS RFOUT/VDD
15093-001 Data Sheet 0.01 GHz to 10 GHz, GaAs, pHEMT, MMIC,
Low Noise Amplifier
HMC8410CHIPS Figure 1. Software defined radios
Electronic warfare
Radar applications GENERAL DESCRIPTION
The HMC8410CHIPS is a gallium arsenide (GaAs), monolithic
microwave integrated circuit (MMIC), pseudomorphic high
electron mobility transistor (pHEMT), low noise, wideband
amplifier that operates over a 0.01 GHz to 10 GHz frequency
range. The HMC8410CHIPS provides a typical gain of 19.5 dB,
a 1.1 dB typical noise figure, and a typical output IP3 of 33 dBm,
requiring only 65 mA from a 5 V supply voltage. The saturated Rev. C output power (PSAT) of 22.5 dBm enables the low noise amplifier
(LNA) to function as a local oscillator (LO) driver for many of
Analog Devices, Inc., balanced, I/Q or image rejection mixers.
The HMC8410CHIPS also features inputs/outputs internally
matched to 50 Ω, making the device ideal for surface mounted
technology (SMT)-based, high capacity microwave radio
applications. Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no …