Datasheet Analog Devices HMC406MS8GE — Datenblatt

HMC406MS8G / 406MS8GE
v06.0611 Amplifiers -Linear & Power -SMT GaAs InGaP HBT MMIC
POWER AMPLIFIER, 5 -6 GHz
Typical Applications Features The HMC406MS8G(E) is ideal for: Gain: 17 dB • WiMAX & WiLAN Saturated Power: +29 dBm • DSRC 38% PAE • Military & Maritime Supply Voltage: +5V • Private Mobile Radio Power Down Capability • UNII & ISM Low External Part Count Functional Diagram General Description
The HMC406MS8G(E) is a high efficiency GaAs
InGaP Heterojunction Bipolar Transistor (HBT) MMIC
Power amplifier which operates between 5 and 6
GHz. The amplifier is packaged in a low cost, surface
mount 8 leaded package with an exposed base
for improved RF and thermal performance. With
a minimum of external components, the amplifier
provides 17 dB of gain and +29 dBm of saturated
power at 38% PAE from a +5V supply voltage. Vpd
can be used for full power down or RF output power/
current control. Electrical Specifications, TA = +25° C, Vs = 5V, Vpd = 5V
Parameter Min. Frequency Range
Gain 13 Gain Variation Over Temperature
Input Return Loss Min. 16 21 0.03 0.04 21 24 34 38 Saturated Output Power (Psat) 14 Noise Figure Max. Units
GHz 17 21 dB 0.03 0.04 dB/ °C 11 dB 9 dB 24 27 dBm 29 dBm 34 38 dBm 27 Output Third Order Intercept (IP3) Typ.
5.7 -5.9 8 Output Power for 1 dB Compression (P1dB) 1 Max. 10 Output Return Loss 6.0 6.0 dB 0.002 / 300 0.002 / 300 mA Vpd = 5V 7 7 mA tON, tOFF 35 35 ns Supply Current (Icq) Vpd = 0V/5V Control Current (Ipd)
Switching Speed Typ.
5-6 Information furnished by Analog Devices is believed to be accurate and reliable. However, no
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