Datasheet Analog Devices HMC-ABH209-SX — Datenblatt

HMC-ABH209
v03.0714 LINEAR & POWER AMPLIFIER -CHIP GaAs HEMT MMIC MEDIUM POWER
AMPLIFIER, 55 -65 GHz
Typical Applications Features This HMC-ABH209 is ideal for: Output IP3: +25 dBm • Short Haul / High Capacity Links P1dB: +16 dBm • Wireless LAN Bridges Gain: 13 dB • Military & Space Supply Voltage: +5V
50 Ohm Matched Input/Output
Die Size: 2.2 x 1.22 x 0.1 mm General Description Functional Diagram The HMC-ABH209 is a high dynamic range, two
stage GaAs HEMT MMIC Medium Power Amplifier
which operates between 55 and 65 GHz. The HMCABH209 provides 13 dB of gain, and an output power
of +16 dBm at 1 dB compression from a +5V supply
voltage. All bond pads and the die backside are
Ti/Au metallized and the amplifier device is fully
passivated for reliable operation. The HMC-ABH209
GaAs HEMT MMIC Medium Power Amplifier is
compatible with conventional die attach methods,
as well as thermocompression and thermosonic
wirebonding, making it ideal for MCM and hybrid
microcircuit applications. All data shown herein is
measured with the chip in a 50 Ohm environment and
contacted with RF probes. Electrical Specifications, TA = +25 °C, Vdd = 5V, Idd = 80mA [2]
Parameter Min. Frequency Range
Gain 12 Typ. Max. Units 55 -65 GHz 13 dB Input Return Loss 13 dB Output Return Loss 17 dB Output Power for 1 dB Compression (P1dB) 16 dBm Output Third Order Intercept (IP3) 25 dBm Saturated Output Power (Psat) 18 dBm Supply Current (Idd) 80 mA [1] Unless otherwise indicated, all measurements are from probed die
[2] Adjust Vgg between -1V to +0.3V (typ -0.3V) to achieve Idd total = 80mA 1 Information furnished by Analog Devices is believed to be accurate and reliable. However, no
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