Datasheet Analog Devices HMC-APH633-SX — Datenblatt

HMC-APH633
v03.0209 LINEAR & POWER AMPLIFIERS -CHIP 3 GaAs HEMT MMIC MEDIUM POWER
AMPLIFIER, 71 -76 GHz Typical Applications Features This HMC-APH633 is ideal for: Gain: 13 dB • Short Haul / High Capacity Links P1dB: +20 dBm • Wireless LAN Bridges Supply Voltage: +4V • Military & Space 50 Ohm Matched Input/Output • E-Band Communication Systems Die Size: 2.47 x 1.60 x 0.05 mm Functional Diagram General Description
The HMC-APH633 is a two stage GaAs HEMT MMIC
Medium Power Amplifier which operates between
71 and 76 GHz. The HMC-APH633 provides 13 dB
of gain, and an output power of +20 dBm at 1 dB
compression from a +4V supply voltage. All bond
pads and the die backside are Ti/Au metallized
and the amplifier device is fully passivated for reliable
operation. The HMC-APH633 GaAs HEMT MMIC
Medium Power Amplifier is compatible with conventional die attach methods, as well as thermocompression and thermosonic wire bonding, making it
ideal for MCM and hybrid microcircuit applications.
All data shown herein is measured with the chip in
a 50 Ohm environment and contacted with RF
probes. Electrical Specifi cations, TA = +25° C, Vdd1=Vdd2 = 4V, Idd1+Idd2 = 240 mA [2]
Parameter Min. Frequency Range
Gain 9 Typ. Max. Units 71-76 GHz 13 dB Input Return Loss 8 dB Output Return Loss 10 dB Output power for 1dB Compression (P1dB) 20 dBm Supply Current (Idd1+Idd2) 240 mA [1] Unless otherwise indicated, all measurements are from probed die.
[2] Adjust Vgg1=Vgg2 between -1V to +0.3V (typ. -0.1V) to achieve Idd total = 240 mA 3 -220 For price,
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