Datasheet Analog Devices HMC313E — Datenblatt

HMC313 / 313E
v07.0418 DRIVER &GAIN BLOCK AMPLIFIERS -SMT GaAs InGaP HBT MMIC BROADBAND
AMPLIFIER GAIN BLOCK, DC -6 GHz
Typical Applications Features Ideal as a Driver & Amplifier for: P1dB Output Power: +14 dBm • 2.2 -2.7 GHz MMDS Output IP3: +27 dBm • 3.5 GHz Wireless Local Loop Gain: 17 dB • 5 -6 GHz UNII & HiperLAN Single Supply: +5V
High Reliability GaAs HBT Process
Ultra Small Package: SOT26
Included in the HMC-DK001 Designer’s Kit General Description Functional Diagram The HMC313 & HMC313E are GaAs InGaP
Heterojunction Bipolar Transistor (HBT) MMIC
amplifiers that operate from a single Vcc supply.
The surface mount SOT26 amplifier can be used
as a broadband gain stage or used with external
matching for optimized narrow band applications.
With Vcc biased at +5V, the HMC313(E) offers 17 dB
of gain and +15 dBm of saturated power while only
requiring 50 mA of current. Electrical Specifications, TA = +25 °C, Vcc = +5.0V
Parameter Vcc = +5V
Min. Frequency Range
Gain Typ. Max. DC -6
14 Gain Variation Over Temperature
Input Return Loss Units
GHz 17 20 dB 0.02 0.03 dB/°C 7 dB Output Return Loss 6 dB Reverse Isolation 30 dB 14 dBm 15 dBm 27 dBm Output Power for 1 dB Compression (P1dB) @ 1.0 GHz 11 Saturated Output Power (Psat) @ 1.0 GHz
Output Third Order Intercept (IP3) @ 1.0 GHz 24 Noise Figure 6.5 dB Supply Current (Icc) 50 mA Note: Data taken with broadband bias tee on device output. 1 Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other …