Datasheet Infineon IRF7342 — Datenblatt

IRF7342PbF  
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 HEXFET® Power MOSFET Generation V Technology
Ultra Low On-Resistance
Dual P Channel MOSFET
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching
Lead-Free   S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 VDSS
RDS(on) max. The SO-8 has been modified through a customized lead frame for
enhanced thermal characteristics and multiple-die capability making it
ideal in a variety of power applications. With these improvements,
multiple devices can be used in an application with dramatically
reduced board space. The package is designed for vapor phase, infra
red, or wave soldering techniques. Power dissipation of greater than
0.8W is possible in a typical PCB mount application. Base part number Package Type IRF7342PbF SO-8 Absolute Maximum Ratings …