Datasheet ON Semiconductor FQP27P06 — Datenblatt

P-Channel QFET® MOSFET
-60 V, -27 A, 70 mΩ Features
Description • -27 A, -60 V, RDS(on) = 70 m (Max.) @ VGS = -10 V,
ID = -13.5 A This P-Channel enhancement mode power MOSFET is
produced using ON Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
audio amplifier, DC motor control, and variable switching
power applications. • Low Gate Charge (Typ. 33 nC)
• Low Crss (Typ. 120 pF)
• 100% Avalanche Tested
• 175C Maximum Junction Temperature Rating S
 G G
D TO-220 S ● Absolute Maximum Ratings
Symbol
VDSS
ID 
TC = 25°C unless otherwise noted Parameter
Drain-Source Voltage
-Continuous (TC = 25°C) …