Datasheet Texas Instruments DRV5012AEDMRR — Datenblatt

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SLVSDD5 – AUGUST 2017 DRV5012 Ultra-Low-Power Digital-Latch Hall-Effect Sensor
1 Features 3 Description The DRV5012 device is an ultra-low-power digitallatch Hall effect sensor with a pin-selectable sampling
rate. Industry-Leading Low-Power Consumption
Pin-Selectable Sampling Rate:
– SEL = Low: 20 Hz Using 1.3 µA (1.8 V)
– SEL = High: 2.5 kHz Using 142 µA (1.8 V)
1.65-to 5.5-V Operating VCC Range
High Magnetic Sensitivity: В±2 mT (Typical)
Robust Hysteresis: 4 mT (Typical)
Push-Pull CMOS Output
Small and Thin X2SON Package
–40°C to +85°C Operating Temperature Range 1 Using an internal oscillator, the DRV5012 device
samples the magnetic field and updates the output at
a rate of 20 Hz or 2.5 kHz, depending on the SEL pin.
This dual-bandwidth feature can allow systems to
monitor changes in movement while using minimal
power. 2 Applications Brushless DC Motor Sensors …