Datasheet Intersil IS9-2100ARH-8 — Datenblatt

DATASHEET
IS-2100ARH, IS-2100AEH FN9037
Rev 3.00
May 10, 2016 Radiation Hardened High Frequency Half Bridge Drivers
The radiation hardened IS-2100ARH, IS-2100AEH are high
frequency, 130V half bridge N-Channel MOSFET driver ICs,
which are functionally similar to industry standard 2110 types.
The low-side and high-side gate drivers are independently
controlled. This gives the user maximum flexibility in dead
time selection and driver protocol.
In addition, the devices have on-chip error detection and
correction circuitry, which monitors the state of the high-side
latch and compares it to the HIN signal. If they disagree, a set
or reset pulse is generated to correct the high-side latch. This
feature protects the high-side latch from single event upsets
(SEUs). Applications Features Electrically screened to DLA SMD # 5962-99536 QML qualified per MIL-PRF-38535 requirements Radiation environment
-Maximum total dose . 300krad(Si)
-DI RSG process provides latch-up immunity
-SEU rating 82MeV/mg/cm2
-Vertical device architecture reduces sensitivity to low dose
rates Bootstrap supply maximum voltage to 150V Drives 1000pF load at 1MHz with rise and fall times of 30ns
(typical) High frequency switch-mode power supplies 1.5A (typical) peak output current Drivers for inductive loads Independent inputs for non-half bridge topologies DC motor drivers Low DC power consumption 60mW (typical) Pin Configuration Operates with VDD = VCC over 12V to 20V range Low-side supply undervoltage protection IS-2100ARH, IS-2100AEH
FLATPACK (CDFP4-F16) …