Datasheet Intersil HS9-4424DRH/PROTO — Datenblatt

DATASHEET
HS-4424DRH, HS4424DEH FN8747
Rev 2.00
October 15, 2015 Dual, Noninverting Power MOSFET Radiation Hardened Drivers
The radiation hardened HS-4424 family are noninverting, dual,
monolithic high-speed MOSFET drivers designed to convert low
voltage control input signals into higher voltage, high current
outputs. The HS-4424DRH, HS-4424DEH are fully tested
across the 8V to 18V operating range. Features The inputs of these devices can be directly driven by the
HS-1825ARH PWM device or by our ACS/ACTS and HCS/HCTS
type logic devices. The fast rise times and high current outputs
allow very quick control of high gate capacitance power
MOSFETs in high frequency applications. Radiation environment High dose rate (50-300rad(Si)/s) . 300krad(Si)
-Low dose rate (0.01rad(Si)/s) . 50krad(Si)*
*Limit established by characterization IPEAK >2A (minimum) The high current outputs minimize power losses in MOSFETs by
rapidly charging and discharging the gate capacitance. The
output stage incorporates a low voltage lockout circuit that
puts the outputs into a three-state mode when the supply
voltage is below its Undervoltage Lockout (UVLO) threshold
voltage.
Constructed with Intersil’s dielectrically isolated Rad Hard
Silicon Gate (RSG) BiCMOS process, these devices are immune
to single event latch-up and have been specifically designed to …