Datasheet Intersil IS-1009EH — Datenblatt

DATASHEET
IS-1009RH, IS-1009EH FN4780
Rev 7.00
Nov 19, 2015 Radiation Hardened 2.5V Reference
The Radiation Hardened IS-1009RH, IS-1009EH are a 2.5V
shunt regulator diode is designed to provide a stable 2.5V
reference over a wide current range. Features These devices are designed to maintain stability over the full
military temperature range and over time. The 0.2% reference
tolerance is achieved by on-chip trimming. QML qualified per MIL-PRF-38535 requirements Electrically screened to SMD #5962-00523 EH version acceptance tested to 50krad(Si) (LDR) Radiation environment
-High dose rate (50-300rad(Si)/s) . 300 krad(Si)
-Low dose rate (0.01rad(Si)/s) 50krad(Si)
-Latch-up immune dielectrically isolated An adjustment terminal is provided to allow for the calibration
of system errors. The use of this terminal to adjust the
reference voltage does not effect the temperature coefficient.
Constructed with the Intersil dielectrically isolated EBHF
process, these devices are immune to single event latch-up
and have been specifically designed to provide highly reliable
performance in harsh radiation environments. Change in VZ vs current (400ВµA to 10mA) 6mV The IS-1009EH replaces the obsoleted IS-1009RH. Maximum reverse breakdown current . 20mA Specifications for Rad Hard QML devices are controlled by the
Defense Logistics Agency Land and Maritime (DLA). The SMD
numbers listed here must be used when ordering. Device is tested with 10ВµF shunt capacitance connected
from V+ to V-, which provides optimum stability Detailed Electrical Specifications for these devices are
contained in SMD 5962-00523. Applications Reverse breakdown voltage (VZ) 2.5V Change in VZ vs temperature (-55В°C to +125В°C) .15mV Interchangeable with 1009 and 136 industry types Power supply monitoring Reference for 5V systems A/D and D/A reference Pin Configurations
IS2-1009RH, IS2-1009EH …