Datasheet Intersil HS-303BEH — Datenblatt

DATASHEET
HS-303ARH, HS-303AEH, HS-303BRH, HS-303BEH FN6411
Rev 3.00
March 4, 2015 Radiation Hardened CMOS Dual SPDT Analog Switch
The HS-303ARH, HS-303AEH, HS-303BRH, HS-303BEH analog
switches are monolithic devices fabricated using Intersil’s
dielectrically isolated Radiation Hardened Silicon Gate (RSG)
process technology to insure latch-up free operation. They are
pinout compatible and functionally equivalent to the
HS-303RH, but offer improved 300kRAD(Si) total dose
capability. These switches offers low-resistance switching
performance for analog voltages up to the supply rails.
ON-resistance is low and stays reasonably constant over the
full range of operating voltage and current. ON-resistance also
stays reasonably constant when exposed to radiation.
Break-before-make switching is controlled by 5V digital inputs.
The HS-303ARH, HS-303AEH should be operated with nominal
В±15V supplies, while the HS-303BRH, HS-303BEH should be
operated with nominal В±12V supplies. Features Specifications Low standby supply current . +150ВµA/-100ВµA
(max, post-rad) Specifications for Rad Hard QML devices are controlled by the
Defense Logistics Agency Land and Maritime (DLA). The SMD
number listed in the following must be used when ordering. QML, per MIL-PRF-38535 Radiation performance
-Total dose: 3x105 rad(Si) …