Datasheet Toshiba TC78B015AFTG — Datenblatt

TC78B015AFTG
TOSHIBA CMOS Integrated Circuit Silicon Monolithic TC78B015AFTG
3-phase Driver for Brushless DC Motors
The TC78B015AFTG is for three-phase full-wave brushless DC
motor with 150-degree trapezoid PWM chopper system. They
control motor rotational speed by changing the PWM duty, based
on the speed control input. Hall signal is supported to one sensor
for the TC78B015AFTG.
P-WQFN36-0505-0.50-001 Features Three-phase full wave drive 150-degree trapezoid PWM chopper system Soft switching Hall amplifier (hall element / hall IC): Power supply: absolute maximum voltage: 36 V Output current: absolute maximum current: 3 A Selectable rotational speed command input signal: Selectable PWM frequency Weight: 0.06 g (typ.) 1-sensor drive Pulse duty signal input/analog voltage input/PWM signal input Adjustable minimum duty in PWM control Adjustable speed ratio in PWM control Selectable lead angle control function: Auto lead angle function/External lead angle control (32 steps correspond
to 0 to 58В°) Selectable rotation direction Brake function terminal Selectable lock detection function Restart function Rotation frequency signal (FG_OUT):
1 pulse/ electrical angle 360В°, 2/3 pulse/ electrical angle 360В°, 1/2 pulse/ electrical angle 360В°,
1/3 pulse/ electrical angle 360В° Lock detection signal (LD_OUT) Power supply voltage monitoring function Overcurrent detection circuit (ISD) Thermal shutdown circuit (TSD) Under voltage lockout circuit (UVLO) Current limit circuit Adjustable start conditions Selectable control function of forced commutation frequency (1-sensor drive). В© 2017 TOSHIBA Corporation 1 2017-02-01 TC78B015AFTG
Pin assignment TSTEP ILIM SGND OSCCR VREG HUP HUM VST FST 27 26 25 24 23 22 21 20 19 LD_OUT 28 18 TIP TEST 29 17 TEST2 SEL_LA 30 16 MVM MIN_SP 31 15 VM SEL_SP 32 FPWM 33 E-PAD 14 VM
13 PGND3
12 LA SEL_LD 34 11 TSP/VSP BRAKE 35
CW/CCW 36
7 8
W 9
FG_OUT 6 W 5 PGND2 4 V U 3 V 2 PGND1 1
U 10 SEL_FG Note 1: Design the pattern in consideration of the heat design because the back side (E-PAD) has the role of heat
radiation. The back side (E-PAD) should be connected to GND because it is connected to the back of the
chip electrically.
Note 2: There are four pairs of terminals named U, V, W, and VM. Connect two each of the terminals which has …