Datasheet Microchip VN2210N3-G — Datenblatt

VN2210
N-Channel Enhancement-Mode Vertical DMOS FET
Features General Description VN2210 is an Enhancement-mode (normally-off)
transistor that utilizes a vertical Double-diffused
Metal-Oxide Semiconductor (DMOS) structure and a
well-proven silicon gate manufacturing process. This
combination produces a device with the power
handling capabilities of bipolar transistors as well as
the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of
all MOS structures, this device is free from thermal
runaway and thermally induced secondary breakdown. Free from Secondary Breakdown
Low Power Drive Requirement
Ease of Paralleling
Low CISS and Fast Switching Speeds
Excellent Thermal Stability
Integral Source-drain Diode
High Input Impedance and High Gain Applications Motor Controls
Converters
Amplifiers
Switches
Power Supply Circuits
Drivers (Relays, Hammers, Solenoids, Lamps, …