Datasheet Microchip TN5325N3-G — Datenblatt

TN5325
N-Channel Enhancement-Mode Vertical DMOS FET
Features General Description The TN5325 is a low-threshold, Enhancement-mode
(normally-off) transistor that utilizes a vertical DMOS
structure and a well-proven silicon gate manufacturing
process. This combination produces a device with the
power handling capabilities of bipolar transistors and
the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of
all MOS structures, this device is free from thermal
runaway and thermally induced secondary breakdown. Low Threshold (2V Maximum)
High Input Impedance and High Gain
Free from Secondary Breakdown
Low CISS and Fast Switching Speeds Applications Logic-level Interfaces (Ideal for TTL and CMOS)
Solid State Relays
Battery-operated Systems
Photo-voltaic Drives
Analog Switches
General Purpose Line Drivers
Telecommunication Switches Microchip’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications
where very low threshold voltage, high breakdown
voltage, high input impedance, low input capacitance …