Datasheet Microchip TN0106 — Datenblatt
| Hersteller | Microchip |
| Serie | TN0106 |
Dieser Enhancement-Mode-Transistor mit niedriger Schwelle (normalerweise ausgeschaltet) verwendet eine vertikale DMOS-Struktur und ein bewährtes Silizium-Gate-Herstellungsverfahren
Datenblätter
TN0106 Datasheet - N-Channel Enhancement-Mode Vertical DMOS FET
PDF, 616 Kb, Revision: 06-27-2014
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Preise
Status
| TN0106N3-G | TN0106N3-G-P003 | TN0106N3-G-P013 | |
|---|---|---|---|
| Lifecycle Status | Production (Appropriate for new designs but newer alternatives may exist) | Production (Appropriate for new designs but newer alternatives may exist) | Production (Appropriate for new designs but newer alternatives may exist) |
Verpackung
| TN0106N3-G | TN0106N3-G-P003 | TN0106N3-G-P013 | |
|---|---|---|---|
| N | 1 | 2 | 3 |
| Package | TO-92 | TO-92 | TO-92 |
| Pins | 3 | 3 | 3 |
Parameter
| Parameters / Models | TN0106N3-G | TN0106N3-G-P003 | TN0106N3-G-P013 |
|---|---|---|---|
| BVdss min, V | 60 | 60 | 60 |
| CISSmax, pF | 60 | 60 | 60 |
| Operating Temperature Range, °C | -55 to +150 | -55 to +150 | -55 to +150 |
| Rds, on) max | 3.0 | 3.0 | 3.0 |
| Vgs(th) max, V | 2.0 | 2.0 | 2.0 |
Öko-Plan
| TN0106N3-G | TN0106N3-G-P003 | TN0106N3-G-P013 | |
|---|---|---|---|
| RoHS | Compliant | Compliant | Compliant |
Modellreihe
Serie: TN0106 (3)