Datasheet Microchip LND150 — Datenblatt

Hersteller	Microchip
Serie	LND150

Der LND150 ist ein Hochspannungstransistor im N-Kanal-Verarmungsmodus (normalerweise eingeschaltet), der die laterale DMOS-Technologie verwendet

Datenblätter

PDF, 610 Kb, Sprache: en, Datei hochgeladen: Nov 15, 2017, Seiten: 7
N-Channel Depletion-Mode DMOS FET Features

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	LND150K1-G	LND150N3-G	LND150N3-G-P002	LND150N3-G-P003	LND150N3-G-P013	LND150N3-G-P014	LND150N8-G
Lifecycle Status	Production (Appropriate for new designs but newer alternatives may exist)	Production (Appropriate for new designs but newer alternatives may exist)	Production (Appropriate for new designs but newer alternatives may exist)	Production (Appropriate for new designs but newer alternatives may exist)	Production (Appropriate for new designs but newer alternatives may exist)	Production (Appropriate for new designs but newer alternatives may exist)	Production (Appropriate for new designs but newer alternatives may exist)

	LND150K1-G	LND150N3-G	LND150N3-G-P002	LND150N3-G-P003	LND150N3-G-P013	LND150N3-G-P014	LND150N8-G
N	1	2	3	4	5	6	7
Package	SOT-23	TO-92	TO-92	TO-92	TO-92	TO-92	SOT-89

Parameters / Models	LND150K1-G	LND150N3-G	LND150N3-G-P002	LND150N3-G-P003	LND150N3-G-P013	LND150N3-G-P014	LND150N8-G
Automotive Recommended	No	No	No	No	No	No	No
BVdsx min, V	500	500	500	500	500	500	500
Lead Count	3	3	3	3	3	3	3
Package Width	1.3mm	-	-	-	-	-	-
RDS, Ω	1000	1000	1000	1000	1000	1000	1000
Vgs(off) max, V	-3.0	-3.0	-3.0	-3.0	-3.0	-3.0	-3.0
Vgs(off) min, V	-1.0	-1.0	-1.0	-1.0	-1.0	-1.0	-1.0

Serie: LND150 (7)