Datasheet Texas Instruments LM5113-Q1 — Datenblatt
| Hersteller | Texas Instruments |
| Serie | LM5113-Q1 |
Automotive, 100 V 1,2-A / 5-A, Halbbrückentor-Treiber für GaN-FETs im Enhancement-Modus
Datenblätter
LM5113-Q1 100-V, 1.2-A, 5-A, Half-Bridge Gate Driver for Enhancement Mode GaN FETs datasheet
PDF, 2.3 Mb, Datei veröffentlicht: Mar 19, 2017
Auszug aus dem Dokument
Status
| LM5113QDPRRQ1 | |
|---|---|
| Lifecycle Status | Active (Recommended for new designs) |
| Manufacture's Sample Availability | Yes |
Verpackung
| LM5113QDPRRQ1 | |
|---|---|
| N | 1 |
| Pin | 10 |
| Package Type | DPR |
| Industry STD Term | WSON |
| JEDEC Code | S-PDSO-N |
| Package QTY | 4500 |
| Carrier | LARGE T&R |
| Device Marking | L5113Q |
| Width (mm) | 4 |
| Length (mm) | 4 |
| Thickness (mm) | .75 |
| Pitch (mm) | .8 |
| Max Height (mm) | .8 |
| Mechanical Data | Herunterladen |
Parameter
| Parameters / Models | LM5113QDPRRQ1 |
|---|---|
| Bus Voltage, V | 90 |
| Driver Configuration | Dual Independent |
| Fall Time, ns | 3.5 |
| Input Threshold | TTL |
| Input VCC(Max), V | 5.5 |
| Input VCC(Min), V | 4.5 |
| Number of Channels | 2 |
| Operating Temperature Range, C | -40 to 125 |
| Package Group | WSON |
| Package Size: mm2:W x L, PKG | See datasheet (WSON) |
| Peak Output Current, A | 5 |
| Power Switch | MOSFET,GaNFET |
| Prop Delay, ns | 30 |
| Rating | Automotive |
| Rise Time, ns | 7 |
Öko-Plan
| LM5113QDPRRQ1 | |
|---|---|
| RoHS | Compliant |
Modellreihe
Serie: LM5113-Q1 (1)
Herstellerklassifikation
- Semiconductors> Power Management> Gallium Nitride (GaN)В Solutions> GaN FET Drivers