Datasheet Texas Instruments LM5113QDPRRQ1 — Datenblatt
| Hersteller | Texas Instruments |
| Serie | LM5113-Q1 |
| Artikelnummer | LM5113QDPRRQ1 |
Automotive, 100 V 1,2-A / 5-A, Halbbrückentor-Treiber für GaN-FETs im Enhancement-Modus 10-WSON -40 bis 125
Datenblätter
LM5113-Q1 100-V, 1.2-A, 5-A, Half-Bridge Gate Driver for Enhancement Mode GaN FETs datasheet
PDF, 2.3 Mb, Datei veröffentlicht: Mar 19, 2017
Auszug aus dem Dokument
Status
| Lifecycle Status | Active (Recommended for new designs) |
| Manufacture's Sample Availability | Yes |
Verpackung
| Pin | 10 |
| Package Type | DPR |
| Industry STD Term | WSON |
| JEDEC Code | S-PDSO-N |
| Package QTY | 4500 |
| Carrier | LARGE T&R |
| Device Marking | L5113Q |
| Width (mm) | 4 |
| Length (mm) | 4 |
| Thickness (mm) | .75 |
| Pitch (mm) | .8 |
| Max Height (mm) | .8 |
| Mechanical Data | Herunterladen |
Parameter
| Bus Voltage | 90 V |
| Driver Configuration | Dual Independent |
| Fall Time | 3.5 ns |
| Input Threshold | TTL |
| Input VCC(Max) | 5.5 V |
| Input VCC(Min) | 4.5 V |
| Number of Channels | 2 |
| Operating Temperature Range | -40 to 125 C |
| Package Group | WSON |
| Package Size: mm2:W x L | See datasheet (WSON) PKG |
| Peak Output Current | 5 A |
| Power Switch | MOSFET,GaNFET |
| Prop Delay | 30 ns |
| Rating | Automotive |
| Rise Time | 7 ns |
Öko-Plan
| RoHS | Compliant |
Design Kits und Evaluierungsmodule
- Evaluation Modules & Boards: LM5113LLPEVB
LM5113 100 V 1.2-A / 5-A, Half-Bridge Gate Driver for Enhancement Mode GaN FETs Evaluation Module
Lifecycle Status: Active (Recommended for new designs)
Modellreihe
Serie: LM5113-Q1 (1)
- LM5113QDPRRQ1
Herstellerklassifikation
- Semiconductors > Power Management > Gallium Nitride (GaN)В Solutions > GaN FET Drivers