Datasheet Texas Instruments ISO5852SQDWQ1 — Datenblatt

HerstellerTexas Instruments
SerieISO5852S-Q1
ArtikelnummerISO5852SQDWQ1
Datasheet Texas Instruments ISO5852SQDWQ1

High-CMTI 2,5-A / 5-A-isolierter IGBT-MOSFET-Gate-Treiber mit geteilten Ausgängen und Schutzfunktionen 16-SOIC -40 bis 125

Datenblätter

ISO5852S-Q1 High-CMTI 2.5-A and 5-A Reinforced Isolated IGBT, MOSFET Gate Driver With Split Outputs and Active Protection Features datasheet
PDF, 1.7 Mb, Revision: A, Datei veröffentlicht: Dec 22, 2016
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Preise

Status

Lifecycle StatusActive (Recommended for new designs)
Manufacture's Sample AvailabilityNo

Verpackung

Pin16
Package TypeDW
Industry STD TermSOIC
JEDEC CodeR-PDSO-G
Package QTY40
CarrierTUBE
Device MarkingISO5852SQ
Width (mm)7.5
Length (mm)10.3
Thickness (mm)2.35
Pitch (mm)1.27
Max Height (mm)2.65
Mechanical DataHerunterladen

Parameter

DIN V VDE V 0884-10 Working Voltage2121 Vpk
DIN V VDE V 0884-10 Transient Overvoltage Rating8000 Vpk
Enable/Disable FunctionN/A
Input VCC(Max)5.5 V
Input VCC(Min)2.25 V
Isolation Rating5700 Vrms
Number of Channels1
Operating Temperature Range-40 to 125 C
Output VCC/VDD(Max)30 V
Output VCC/VDD(Min)15 V
Package GroupSOIC
Package Size: mm2:W x L16SOIC: 106 mm2: 10.3 x 10.3(SOIC) PKG
Peak Output Current5 A
Power SwitchIGBT
Prop Delay110 ns
Prop Delay(Max)110 ns

Öko-Plan

RoHSCompliant

Design Kits und Evaluierungsmodule

  • Evaluation Modules & Boards: ISO5852SEVM
    Reinforced Isolated IGBT Gate Driver Evaluation Module
    Lifecycle Status: Active (Recommended for new designs)

Modellreihe

Serie: ISO5852S-Q1 (2)

Herstellerklassifikation

  • Semiconductors > Isolation > Isolated Gate Driver