Datasheet Texas Instruments ISO5852SMDWREP — Datenblatt

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SLLSEW1 – DECEMBER 2016 ISO5852S-EP High-CMTI 2.5-A and 5-A Reinforced Isolated IGBT, MOSFET Gate Driver
With Split Outputs and Active Protection Features
1 Features 3 Description The ISO5852S-EP device is a 5.7-kVRMS, reinforced
isolated gate driver for IGBTs and MOSFETs with
split outputs, OUTH and OUTL, providing 2.5-A
source and 5-A sink current. The input side operates
from a single 2.25-V to 5.5-V supply. The output side
allows for a supply range from minimum 15-V to
maximum 30-V. Two complementary CMOS inputs
control the output state of the gate driver. The short
propagation time of 76 ns provides accurate control
of the output stage. 1 100-kV/Ојs Minimum Common-Mode Transient
Immunity (CMTI) at VCM = 1500 V
Split Outputs to Provide 2.5-A Peak Source and
5-A Peak Sink Currents
Short Propagation Delay: 76 ns (Typ),
110 ns (Max) …