Datasheet Texas Instruments EMB1412 — Datenblatt
| Hersteller | Texas Instruments |
| Serie | EMB1412 |
EMB1412 MOSFET-Gate-Treiber
Datenblätter
EMB1412 MOSFET Gate Driver datasheet
PDF, 789 Kb, Revision: B, Datei veröffentlicht: Nov 20, 2014
Auszug aus dem Dokument
Status
| EMB1412MY/NOPB | EMB1412MYE/NOPB | |
|---|---|---|
| Lifecycle Status | Active (Recommended for new designs) | Active (Recommended for new designs) |
| Manufacture's Sample Availability | No | Yes |
Verpackung
| EMB1412MY/NOPB | EMB1412MYE/NOPB | |
|---|---|---|
| N | 1 | 2 |
| Pin | 8 | 8 |
| Package Type | DGN | DGN |
| Industry STD Term | HVSSOP | HVSSOP |
| JEDEC Code | S-PDSO-G | S-PDSO-G |
| Package QTY | 1000 | 250 |
| Carrier | LARGE T&R | SMALL T&R |
| Device Marking | SA3B | SA3B |
| Width (mm) | 3 | 3 |
| Length (mm) | 3 | 3 |
| Thickness (mm) | 1.02 | 1.02 |
| Pitch (mm) | .65 | .65 |
| Max Height (mm) | 1.1 | 1.1 |
| Mechanical Data | Herunterladen | Herunterladen |
Parameter
| Parameters / Models | EMB1412MY/NOPB | EMB1412MYE/NOPB |
|---|---|---|
| Channel Input Logic | Inverting,Non-Inverting | Inverting,Non-Inverting |
| Fall Time, ns | 12 | 12 |
| Input Threshold | TTL | TTL |
| Input VCC(Max), V | 14 | 14 |
| Input VCC(Min), V | 3.5 | 3.5 |
| Number of Channels | 1 | 1 |
| Operating Temperature Range, C | -40 to 125 | -40 to 125 |
| Package Group | MSOP-PowerPAD | MSOP-PowerPAD |
| Peak Output Current, A | 3 | 3 |
| Power Switch | MOSFET | MOSFET |
| Prop Delay, ns | 25 | 25 |
| Rating | Catalog | Catalog |
| Rise Time, ns | 14 | 14 |
| Special Features | Single Supply | Single Supply |
Öko-Plan
| EMB1412MY/NOPB | EMB1412MYE/NOPB | |
|---|---|---|
| RoHS | Compliant | Compliant |
Modellreihe
Serie: EMB1412 (2)
Herstellerklassifikation
- Semiconductors> Power Management> MOSFET and IGBT Gate Drivers> Low-side Driver