Datasheet Texas Instruments CSD23382F4 — Datenblatt
| Hersteller | Texas Instruments |
| Serie | CSD23382F4 |
P-Kanal-NexFET-Leistungs-MOSFET
Datenblätter
CSD23382F4 12 V P-Channel FemtoFET MOSFET datasheet
PDF, 755 Kb, Revision: C, Datei veröffentlicht: Oct 20, 2014
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Preise
Status
| CSD23382F4 | CSD23382F4T | |
|---|---|---|
| Lifecycle Status | Active (Recommended for new designs) | Active (Recommended for new designs) |
| Manufacture's Sample Availability | No | Yes |
Verpackung
| CSD23382F4 | CSD23382F4T | |
|---|---|---|
| N | 1 | 2 |
| Pin | 3 | 3 |
| Package Type | YJC | YJC |
| Package QTY | 3000 | 250 |
| Carrier | LARGE T&R | SMALL T&R |
| Device Marking | EM | EM |
| Width (mm) | .635 | .635 |
| Length (mm) | 1.035 | 1.035 |
| Mechanical Data | Herunterladen | Herunterladen |
Parameter
| Parameters / Models | CSD23382F4 | CSD23382F4T |
|---|---|---|
| Configuration | Single | Single |
| Id Max Cont, A | -3.5 | -3.5 |
| Id Peak(Max), A | -22 | -22 |
| Package, mm | LGA 0.6x1.0 | LGA 0.6x1.0 |
| QG Typ, nC | 1.04 | 1.04 |
| QGD Typ, nC | 0.15 | 0.15 |
| QGS Typ, nC | 0.5 | 0.5 |
| Rds(on) Max at VGS=1.8V, mOhms | 199 | 199 |
| Rds(on) Max at VGS=2.5V, mOhms | 105 | 105 |
| Rds(on) Max at VGS=4.5V, mOhms | 76 | 76 |
| VDS, V | -12 | -12 |
| VGS, V | -8 | -8 |
| VGSTH Typ, V | -0.8 | -0.8 |
Öko-Plan
| CSD23382F4 | CSD23382F4T | |
|---|---|---|
| RoHS | Compliant | Compliant |
Modellreihe
Serie: CSD23382F4 (2)
Herstellerklassifikation
- Semiconductors> Power Management> Power MOSFET> P-Channel MOSFET Transistor