Datasheet Texas Instruments CSD13303W1015 — Datenblatt

HerstellerTexas Instruments
SerieCSD13303W1015
ArtikelnummerCSD13303W1015
Datasheet Texas Instruments CSD13303W1015

N-Kanal NexFET ™ Leistungs-MOSFET 6-DSBGA -55 bis 150

Datenblätter

N-Channel NexFETв„ў Power MOSFET, CSD13303W1015 datasheet
PDF, 822 Kb, Revision: A, Datei veröffentlicht: May 23, 2012
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Preise

Status

Lifecycle StatusActive (Recommended for new designs)
Manufacture's Sample AvailabilityYes

Verpackung

Pin6
Package TypeYZC
Industry STD TermDSBGA
JEDEC CodeR-XBGA-N
Package QTY3000
CarrierLARGE T&R
Device Marking13303
Width (mm)1.8
Length (mm)1.5
Thickness (mm)2
Pitch (mm).5
Max Height (mm)1
Mechanical DataHerunterladen

Parameter

ConfigurationSingle
IDM, Max Pulsed Drain Current(Max)31 A
PackageWLP 1.0x1.5 mm
QG Typ3.9 nC
QGD Typ0.4 nC
RDS(on) Typ at VGS=4.5V16 mOhm
Rds(on) Max at VGS=4.5V20 mOhms
VDS12 V
VGS8 V
VGSTH Typ0.85 V

Öko-Plan

RoHSCompliant

Herstellerklassifikation

  • Semiconductors > Power Management > Power MOSFET > N-Channel MOSFET Transistor