Datasheet Texas Instruments CSD19532Q5BT — Datenblatt

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SLPS414B – DECEMBER 2013 – REVISED MAY 2017 CSD19532Q5B 100 V N-Channel NexFET™ Power MOSFET
1 Features 1 Product Summary Low Qg and Qgd
Low Thermal Resistance
Avalanche Rated
Pb-Free Terminal Plating
RoHS Compliant
Halogen Free
SON 5-mm × 6-mm Plastic Package TA = 25°C TYPICAL VALUE Drain-to-Source Voltage 100 V Qg Gate Charge Total (10 V) 48 nC Qgd Gate Charge Gate to Drain 8.7 RDS(on) Drain-to-Source On Resistance VGS(th) Threshold Voltage nC VGS = 6 V 4.6 mΩ VGS = 10 V 4 mΩ 2.6 V .
Ordering Information(1) 2 Applications UNIT VDS Synchronous Rectifier for Offline and Isolated DCDC Converters
Motor Control Device Media Qty Package Ship CSD19532Q5B 13-Inch Reel 2500 CSD19532Q5BT 13-Inch Reel 250 SON 5 x 6 mm
Plastic Package Tape and
Reel 3 Description (1) For all available packages, see the orderable addendum at
the end of the data sheet. This 100 V, 4 mО©, SON 5-mm Г— 6-mm NexFETв„ў
power MOSFET is designed to minimize losses in
power conversion applications. TA = 25В°C Top View
S 8 1 D Absolute Maximum Ratings
VALUE UNIT VDS Drain-to-Source Voltage 100 V VGS Gate-to-Source Voltage В±20 V Continuous Drain Current (Package limited) 100 Continuous Drain Current (Silicon limited), …