Datasheet Texas Instruments LPC662IM/NOPB — Datenblatt

HerstellerTexas Instruments
SerieLPC662
ArtikelnummerLPC662IM/NOPB
Datasheet Texas Instruments LPC662IM/NOPB

Low Power CMOS Dual Operationsverstärker 8-SOIC -40 bis 85

Datenblätter

LPC662 Low Power CMOS Dual Operational Amplifier datasheet
PDF, 639 Kb, Revision: B, Datei veröffentlicht: May 1, 2004
Auszug aus dem Dokument

Preise

Status

Lifecycle StatusActive (Recommended for new designs)
Manufacture's Sample AvailabilityYes

Verpackung

Pin88
Package TypeDD
Industry STD TermSOICSOIC
JEDEC CodeR-PDSO-GR-PDSO-G
Package QTY9595
CarrierTUBETUBE
Device Marking2IMLPC66
Width (mm)3.913.91
Length (mm)4.94.9
Thickness (mm)1.581.58
Pitch (mm)1.271.27
Max Height (mm)1.751.75
Mechanical DataHerunterladenHerunterladen

Parameter

Additional FeaturesN/A
ArchitectureCMOS
CMRR(Min)63 dB
CMRR(Typ)83 dB
GBW(Typ)0.35 MHz
Input Bias Current(Max)4 pA
Iq per channel(Max)0.06 mA
Iq per channel(Typ)0.043 mA
Number of Channels2
Offset Drift(Typ)1.3 uV/C
Operating Temperature Range-40 to 85 C
Output Current(Typ)21 mA
Package GroupSOIC
Package Size: mm2:W x L8SOIC: 29 mm2: 6 x 4.9(SOIC) PKG
Rail-to-RailIn to V-,Out
RatingCatalog
Slew Rate(Typ)0.11 V/us
Total Supply Voltage(Max)15 +5V=5, +/-5V=10
Total Supply Voltage(Min)5 +5V=5, +/-5V=10
Vn at 1kHz(Typ)42 nV/rtHz
Vos (Offset Voltage @ 25C)(Max)3 mV

Öko-Plan

RoHSCompliant

Modellreihe

Herstellerklassifikation

  • Semiconductors > Amplifiers > Operational Amplifiers (Op Amps) > Precision Op Amps