Datasheet Texas Instruments CSD25213W10 — Datenblatt

HerstellerTexas Instruments
SerieCSD25213W10
ArtikelnummerCSD25213W10
Datasheet Texas Instruments CSD25213W10

P-Kanal NexFET ™ Leistungs-MOSFET 4-DSBGA -55 bis 150

Datenblätter

P-Channel NexFETв„ў Power MOSFET, CSD25213W10 datasheet
PDF, 686 Kb, Datei veröffentlicht: Jun 19, 2013
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Preise

Status

Lifecycle StatusActive (Recommended for new designs)
Manufacture's Sample AvailabilityYes

Verpackung

Pin4
Package TypeYZB
Industry STD TermDSBGA
JEDEC CodeS-XBGA-N
Package QTY3000
CarrierLARGE T&R
Device Marking213
Thickness (mm).65
Pitch (mm).5
Max Height (mm).625
Mechanical DataHerunterladen

Parameter

ConfigurationSingle
Id Max Cont-1.6 A
Id Peak(Max)-16 A
PackageWLP 1.0x1.0 mm
QG Typ2.2 nC
QGD Typ0.14 nC
QGS Typ0.74 nC
Rds(on) Max at VGS=2.5V67 mOhms
Rds(on) Max at VGS=4.5V47 mOhms
VDS-20 V
VGS-6 V
VGSTH Typ-0.85 V

Öko-Plan

RoHSCompliant

Herstellerklassifikation

  • Semiconductors > Power Management > Power MOSFET > P-Channel MOSFET Transistor