Datasheet New Jersey Semiconductor OA95 — Datenblatt

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20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005
FAX: (973) 376-8960 OA95
Gold Bonded Germanium Diode FEATURES Low forward voltage drop-low power consumption Thirty years of proven reliability-one million hours mean time between failures (MTBF) Very lownoise level Metallurgical^ bonded
ABSOLUTE MAXIMUM RATINGS (at 25 °C, unless otherwise specified) Peak Inverse Voltage Peak Forward Current Operating Temperature Average Power Dissipation ELECTRICAL CHARACTERISTICS
Symbol 115 500 -65 °C to 85 80
Conditions Volts mA °C mW
Unit Min Max T°C Peak Inverse Voltage Reverse Current Forward Voltage PIV Ir Vf 1 mA 40 V 10 mA 115 30 1.05 V |iA V 25 °C 25 °C 25 °C MECHANICAL
.021' DIA 1.019"
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MIN 300" MAX .107' .095" DIA NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors …