Datasheet SDB10S120 - SemiSouth DIODE, SIC, 1200 V, 10 A, TO-252 — Datenblatt

Part Number: SDB10S120

Detaillierte Beschreibung

Manufacturer: SemiSouth

Description: DIODE, SIC, 1200 V, 10 A, TO-252

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Docket:
Silicon Carbide
SDB10S120
Silicon Carbide Power Schottky Diode
Features: - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior - 175 °C Maximum Operating Temperature - Zero Reverse Recovery Current - Zero Forward Recovery Voltage
Product Summary

Specifications:

  • Diode Configuration: Single
  • Diode Type: SiC Schottky
  • Forward Current If(AV): 10 A
  • Forward Surge Current Ifsm Max: 250 A
  • Forward Voltage VF Max: 1.8 V
  • MSL: MSL 1 - Unlimited
  • Number of Pins: 3
  • Operating Temperature Range: -55°C to +175°C
  • Package / Case: TO-252
  • Repetitive Reverse Voltage Vrrm Max: 1.2 kV
  • RoHS: Yes