Datasheet MMBFJ309LT1G - ON Semiconductor TRANSISTOR, JFET, N, 25 V, SOT-23 — Datenblatt

ON Semiconductor MMBFJ309LT1G

Part Number: MMBFJ309LT1G

Detaillierte Beschreibung

Manufacturer: ON Semiconductor

Description: TRANSISTOR, JFET, N, 25 V, SOT-23

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Docket:
MMBFJ309L, MMBFJ310L, SMMBFJ310L JFET - VHF/UHF Amplifier Transistor
N-Channel
Features http://onsemi.com
2 SOURCE
· AEC-Q101 Qualified and PPAP Capable · S Prefix for Automotive and Other Applications Requiring Unique ·

Specifications:

  • Breakdown Voltage Vbr: 25 V
  • Capacitance Ciss Max: 5 pF
  • Current Idss Max: 30 mA
  • Current Idss Min: 12 mA
  • Drain Source Voltage Vds: 25 V
  • Gate-Source Cutoff Voltage Vgs(off) Max: 4 V
  • Mounting Type: SMD
  • Number of Pins: 3
  • Package / Case: SOT-23
  • Power Dissipation Max: 225 mW
  • Power Dissipation: 225 mW
  • SMD Marking: 6 x
  • SVHC: No SVHC (19-Dec-2011)
  • Transistor Case Style: SOT-23
  • Transistor Polarity: N Channel
  • Transistor Type: JFET
  • Voltage Vgs Off Min: -1 V
  • Zero Gate Voltage Drain Current Idss: 12 mA to 30 mA

RoHS: Yes