Datasheet SI4650DY-T1-GE3 - Vishay MOSFET, NN CH, SCH DIODE, 30 V, SO8 — Datenblatt

Vishay SI4650DY-T1-GE3

Part Number: SI4650DY-T1-GE3

Detaillierte Beschreibung

Manufacturer: Vishay

Description: MOSFET, NN CH, SCH DIODE, 30 V, SO8

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Docket:
Si4650DY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
VDS (V) Channel-1 Channel-2 30 30 RDS(on) () 0.018 at VGS = 10 V 0.022 at VGS = 4.5 V 0.018 at VGS = 10 V 0.022 at VGS = 4.5 V ID (A)a, e Qg (Typ.) 8.0 8.0 8.0 8.0 10.5 10.5

Specifications:

  • Continuous Drain Current Id: 8 A
  • Drain Source Voltage Vds: 30 V
  • Module Configuration: Dual
  • Number of Pins: 8
  • On Resistance Rds(on): 0.014 Ohm
  • Operating Temperature Range: -55°C to +150°C
  • Power Dissipation: 3.1 W
  • Rds(on) Test Voltage Vgs: 10 V
  • Transistor Case Style: SOIC
  • Transistor Polarity: N Channel

RoHS: Yes

Andere Namen:

SI4650DYT1GE3, SI4650DY T1 GE3