Datasheet SI4564DY-T1-GE3 - Vishay MOSFET, NP CH, W/DIODE, 40 V, SO8 — Datenblatt

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Manufacturer: Vishay

Description: MOSFET, NP CH, W/DIODE, 40 V, SO8

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Docket:
Si4564DY
Vishay Siliconix
N- and P-Channel 40 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) N-Channel P-Channel 40 - 40 RDS(on) () 0.0175 at VGS = 10 V 0.020 at VGS = 4.5 V 0.021 at VGS = - 10 V 0.028 at VGS = - 4.5 V ID (A)a Qg (Typ.) 10 9.2 - 9.2 - 7.4 9.8 21.7

Specifications:

• Continuous Drain Current Id: 10 A
• Drain Source Voltage Vds: 40 V
• Module Configuration: Dual
• Number of Pins: 8
• On Resistance Rds(on): 0.0145 Ohm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation: 3.1 W
• Rds(on) Test Voltage Vgs: 10 V
• Transistor Case Style: SOIC
• Transistor Polarity: N and P Channel

RoHS: Yes

Andere Namen:

SI4564DYT1GE3, SI4564DY T1 GE3