Datasheet SI4288DY-T1-GE3 - Vishay MOSFET, NN CH, W/D, 40 V, 9.2 A, SO8 — Datenblatt

Vishay SI4288DY-T1-GE3

Part Number: SI4288DY-T1-GE3

Detaillierte Beschreibung

Manufacturer: Vishay

Description: MOSFET, NN CH, W/D, 40 V, 9.2 A, SO8

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Docket:
Si4288DY
Vishay Siliconix
Dual N-Channel 40 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 40 RDS(on) () 0.020 at VGS = 10 V 0.023 at VGS = 4.5 V ID (A)a 9.2 8.6 Qg (Typ.) 4.9

Specifications:

  • Continuous Drain Current Id: 9.2 A
  • Drain Source Voltage Vds: 40 V
  • Module Configuration: Dual
  • Number of Pins: 8
  • On Resistance Rds(on): 0.0165 Ohm
  • Operating Temperature Range: -55°C to +150°C
  • Power Dissipation: 3.1 W
  • Rds(on) Test Voltage Vgs: 10 V
  • Transistor Case Style: SOIC
  • Transistor Polarity: N Channel

RoHS: Yes

Andere Namen:

SI4288DYT1GE3, SI4288DY T1 GE3