Datasheet SI4288DY-T1-GE3 - Vishay MOSFET, NN CH, W/D, 40 V, 9.2 A, SO8 — Datenblatt
Part Number: SI4288DY-T1-GE3
Detaillierte Beschreibung
Manufacturer: Vishay
Description: MOSFET, NN CH, W/D, 40 V, 9.2 A, SO8
Docket:
Si4288DY
Vishay Siliconix
Dual N-Channel 40 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 40 RDS(on) () 0.020 at VGS = 10 V 0.023 at VGS = 4.5 V ID (A)a 9.2 8.6 Qg (Typ.) 4.9
Specifications:
- Continuous Drain Current Id: 9.2 A
- Drain Source Voltage Vds: 40 V
- Module Configuration: Dual
- Number of Pins: 8
- On Resistance Rds(on): 0.0165 Ohm
- Operating Temperature Range: -55°C to +150°C
- Power Dissipation: 3.1 W
- Rds(on) Test Voltage Vgs: 10 V
- Transistor Case Style: SOIC
- Transistor Polarity: N Channel
RoHS: Yes
Andere Namen:
SI4288DYT1GE3, SI4288DY T1 GE3