Datasheet C4D05120E - Cree SILICON CARBIDE (SIC) SCHOTTKY DIODE, 8.2 A, 1200 V, TO-220 — Datenblatt

Cree C4D05120E

Part Number: C4D05120E

Detaillierte Beschreibung

Manufacturer: Cree

Description: SILICON CARBIDE (SIC) SCHOTTKY DIODE, 8.2 A, 1200 V, TO-220

Specifications:

  • Diode Type: SiC Schottky
  • Forward Current If(AV): 8.2 A
  • Forward Surge Current Ifsm Max: 46 A
  • Forward Voltage VF Max: 1.8 V
  • Repetitive Reverse Voltage Vrrm Max: 1200 V

RoHS: Yes