Datasheet BAS29,215 - NXP DIODE, SW, 110 V, 0.25 A , SOT-23 — Datenblatt

NXP BAS29,215

Part Number: BAS29,215

Detaillierte Beschreibung

Manufacturer: NXP

Description: DIODE, SW, 110 V, 0.25 A , SOT-23

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Docket:
DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D088
BAS29; BAS31; BAS35 General purpose controlled avalanche (double) diodes

Specifications:

  • Current Ifsm: 10 A
  • Diode Type: General Purpose
  • Forward Current If(AV): 400 mA
  • Forward Surge Current Ifsm Max: 10 A
  • Forward Voltage VF Max: 1.25 V
  • Junction Temperature Tj Max: 150°C
  • Mounting Type: SMD
  • Number of Pins: 3
  • Operating Temperature Range: -65°C to +150°C
  • Package / Case: SOT-23
  • Repetitive Reverse Voltage Vrrm Max: 110 V
  • Reverse Recovery Time trr Max: 50 ns
  • Reverse Recovery Time trr Typ: 50 ns
  • SVHC: No SVHC (19-Dec-2011)

RoHS: Yes

Andere Namen:

BAS29215, BAS29 215